TechRxiv

Kilovolt-Class β-Ga2O3 MOSFETs on 1-inch Bulk Substrates

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posted on 2023-11-27, 13:59 authored by Carl PetersonCarl Peterson, Fikadu Alema, arkka bhattacharyya, ziliang ling, Saurav RoySaurav Roy, Andrei Osinsky, Sriram Krishnamoorthy

We report on the demonstration of β-Ga2O3 MOSFETs fabricated on 1-inch bulk substrates using metalorganic vapor phase epitaxy (MOVPE) with disilane (Si2H6) as the silicon precursor. Sheet charge uniformity of the as-grown films was measured via Hall and ranged from 5.9 - 6.7 × 1012 cm-2 with a uniform Hall mobility of 125-129 cm2 /V.s across the sample. MOSFET devices with a source-drain width of 5.1 μm were measured across the wafer and had a minimum on-resistance (RON) of 47.87 Ω.mm with a maximum on-current (ION) of 165mA/mm. For these same devices, the on-current (ION) and pinch-off voltage (VP) uniformity across the wafer were 137±12 mA/mm and -27.3±7.3 V respectively. Devices showed low reverse leakage current until catastrophic breakdown occurred, with measured breakdown voltages (VBR) of up to 2.15 kV. This work provides valuable insights into understanding the growth, fabrication, and characterization processes for β-Ga2O3 FETs on full waferscale substrates. It also projects the promise of developing lateral β-Ga2O3 FETs with high current carrying capabilities and breakdown voltages, especially on substrates of 1 inch or larger.  

Funding

Coherent / II-VI Foundation

Air Force Research Laboratory Materials and Manufacturing Directorate (AFRL/RX)

History

Email Address of Submitting Author

carlpeterson@ucsb.edu

ORCID of Submitting Author

0000-0003-1151-9003

Submitting Author's Institution

University of California Santa Barbara

Submitting Author's Country

  • United States of America

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